Part Number | SI7102DN-T1-E3 (ROHS) |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 12V 35A PPAK 1212-8 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 3720pF @ 6V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 15A, 4.5V |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | - |
Package / Case | PowerPAK 1212-8 |
Image |
SI7102DN-T1-E3
STMicroel
372
1.87
Gallop Great Holdings (Hong Kong) Limited
SI7102DN-T1-E3
STMICROELECT
55300
2.8675
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
Si7102DN-T1-E3
ST/MICRON
50000
3.865
Hong Kong Yingweida Electronics Co., Ltd.
SI7102DN-T1-E3
ST
10000
4.8625
Hong Kong Capital Industrial Co.,Ltd
Si7102DN-T1-E3
STMicroelectronics
4868000
5.86
Shenzhen WTX Capacitor Co., Ltd.