Description
MOSFET N/P-CH 20V 8-TSSOP Series: TrenchFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: - Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250米A (Min) Gate Charge (Qg) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173, 4.40mm Width) Supplier Device Package: 8-TSSOP
Part Number | SI6562DQ-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET N/P-CH 20V 8-TSSOP |
Series | TrenchFET |
Packaging | |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 4.5A, 4.5V |
Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package | 8-TSSOP |
Image |
SI6562DQ-T1-E3
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