Description
MOSFET 2P-CH 12V 3.1A CHIPFET Series: TrenchFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25~C: 3.1A Rds On (Max) @ Id, Vgs: 86 mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 1mA (Min) Gate Charge (Qg) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?
Part Number | SI5975DC-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2P-CH 12V 3.1A CHIPFET |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 3.1A |
Rds On (Max) @ Id, Vgs | 86 mOhm @ 3.1A, 4.5V |
Vgs(th) (Max) @ Id | 450mV @ 1mA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | 1206-8 ChipFET |
Image |
SI5975DC-T1-E3
STMicroel
5000000
1.66
Hongkong Shengshi Electronics Limited
SI5975DC-T1-E3
STMICROELECT
4700
2.46
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI5975DC-T1-E3
ST/MICRON
1487
3.26
Pivot Technology Co., Ltd.
SI5975DC-T1-E3
ST
8000
4.06
MY Group (Asia) Limited
SI5975DC-T1-E3
STMicroelectronics
18000
4.86
MASSTOCK ELECTRONICS LIMITED