Description
MOSFET 2N-CH 8V 4A 1206-8 Series: TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25~C: 4A Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) @ Vds: 680pF @ 4V Power - Max: 3.12W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?
Part Number | SI5920DC-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 8V 4A 1206-8 |
Series | TrenchFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 4A |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 6.8A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 4V |
Power - Max | 3.12W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | 1206-8 ChipFET |
Image |
SI5920DC-T1-E3
STMicroel
15907
1
HK HEQING ELECTRONICS LIMITED
SI5920DC-T1-E3
STMICROELECT
2885
1.6675
Gallop Great Holdings (Hong Kong) Limited
SI5920DC-T1-E3
ST/MICRON
7000
2.335
N&S Electronic Co., Limited
SI5920DC-T1-E3 IC
ST
12407
3.0025
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI5920DC-T1-E3
STMicroelectronics
219716
3.67
Cicotex Electronics (HK) Limited