Part Number | SI5908DC-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 20V 4.4A 1206-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.4A |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 4.4A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | 1206-8 ChipFET |
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SI5908DC-T1-E3
STMicroel
9174
0.84
HK HEQING ELECTRONICS LIMITED
SI5908DC-T1-E3
STMICROELECT
5859
2.3
Nosin (HK) Electronics Co.
Si5908DC-T1-E3
ST/MICRON
7075
3.76
Yingxinyuan INT'L (Group) Limited
SI5908DC-T1-E3
ST
1767
5.22
Gallop Great Holdings (Hong Kong) Limited
SI5908DC-T1-E3
STMicroelectronics
7199
6.68
Cicotex Electronics (HK) Limited