Description
MOSFET 2N-CH 30V 4A 1206-8 Series: TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 4A Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) @ Vds: 220pF @ 15V Power - Max: 3.12W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?
Part Number | SI5902BDC-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 30V 4A 1206-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 15V |
Power - Max | 3.12W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | - |
Image |
SI5902BDC-T1-E3
STMicroel
5000
1.41
Gallop Great Holdings (Hong Kong) Limited
SI5902BDC-T1-E3
STMICROELECT
3000
2.8275
Yingxinyuan INT'L (Group) Limited
SI5902BDC-T1-E3
ST/MICRON
3473
4.245
ATLANTIC TECHNOLOGY LIMITED
SI5902BDC-T1-E3
ST
5000000
5.6625
Hongkong Shengshi Electronics Limited
SI5902BDC-T1-E3
STMicroelectronics
2106
7.08
HK HEQING ELECTRONICS LIMITED