Part Number | SI5856DC-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 20V 4.4A 1206-8 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 1.1W (Ta) |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 4.4A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 1206-8 ChipFET |
Package / Case | 8-SMD, Flat Lead |
Image |
SI5856DC-T1-E3
STMicroel
5000000
0.54
Hongkong Shengshi Electronics Limited
SI5856DC-T1-E3
STMICROELECT
360000
0.8375
GITSAMDAK ELECTRONICS (HK) CO., LIMITED
SI5856DC-T1-E3
ST/MICRON
4459
1.135
HK HEQING ELECTRONICS LIMITED
SI5856DC-T1-E3
ST
219696
1.4325
Cicotex Electronics (HK) Limited
SI5856DC-T1-E3
STMicroelectronics
77498
1.73
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED