Part Number | SI5406DC-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 12V 6.9A 1206-8 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 600mV @ 1.2mA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 6.9A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 1206-8 ChipFET |
Package / Case | 8-SMD, Flat Lead |
Image |
SI5406DC-T1-E3
STMicroel
6559
1
Gallop Great Holdings (Hong Kong) Limited
SI5406DC-T1-E3
STMICROELECT
8755
2.0475
Cicotex Electronics (HK) Limited
SI5406DC-T1-E3
ST/MICRON
3338
3.095
Viassion Technology Co., Limited
SI5406DC-T1-E3
ST
8027
4.1425
Yingxinyuan INT'L (Group) Limited
SI5406DC-T1-E3
STMicroelectronics
3269
5.19
N&S Electronic Co., Limited