Part Number | SI5402DC-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 4.9A 1206-8 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 4.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 1206-8 ChipFET |
Package / Case | 8-SMD, Flat Lead |
Image |
SI5402DC-T1-E3
STMicroel
83000
1.34
Yingxinyuan INT'L (Group) Limited
SI5402DC-T1-E3
STMICROELECT
8000
2.2825
HongKong Bitfoic Electronics Limited
SI5402DC-T1-E3
ST/MICRON
1291
3.225
Yingxinyuan INT'L (Group) Limited
SI5402DC-T1-E3
ST
82303
4.1675
N&S Electronic Co., Limited
SI5402DC-T1-E3
STMicroelectronics
55100
5.11
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED