Part Number | SI4936BDY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 30V 6.9A 8-SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6.9A |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 5.9A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 15V |
Power - Max | 2.8W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
SI4936BDY-T1-GE3
STMicroel
895
1
HK HEQING ELECTRONICS LIMITED
SI4936BDY-T1-GE3
STMICROELECT
8419
1.7925
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI4936BDY-T1-GE3
ST/MICRON
6822
2.585
Shenzhen WTX Capacitor Co., Ltd.
SI4936BDY-T1-GE3
ST
9954
3.3775
Cicotex Electronics (HK) Limited
SI4936BDY-T1-GE3
STMicroelectronics
9865
4.17
Yingxinyuan INT'L (Group) Limited