Part Number | SI4910DY-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 40V 7.6A 8-SOIC |
Series | TrenchFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 7.6A |
Rds On (Max) @ Id, Vgs | 27 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 855pF @ 20V |
Power - Max | 3.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
SI4910DY-T1-E3
STMicroel
3008
0.47
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI4910DY-T1-E3
STMICROELECT
7648
1.4025
Far East Electronics Technology Limited
Si4910DY-T1-E3
ST/MICRON
2326
2.335
Hong Kong Yingweida Electronics Co., Ltd.
SI4910DY-T1-E3
ST
4257
3.2675
Shenzhen WTX Capacitor Co., Ltd.
SI4910DY-T1-E3 GE3
STMicroelectronics
5297
4.2
CIS Ltd (CHECK IC SOLUTION LIMITED)