Part Number | SI4906DY-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 40V 6.6A 8-SOIC |
Series | TrenchFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 6.6A |
Rds On (Max) @ Id, Vgs | 39 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 625pF @ 20V |
Power - Max | 3.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
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SI4906DY-T1-E3
STMicroel
5081
1.64
HK HEQING ELECTRONICS LIMITED
SI4906DY-T1-E3
STMICROELECT
9785
2.7225
Shenzhen WTX Capacitor Co., Ltd.
SI4906DY-T1-E3
ST/MICRON
558
3.805
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI4906DY-T1-E3
ST
5540
4.8875
Far East Electronics Technology Limited
SI4906DY-T1-E3
STMicroelectronics
3613
5.97
Cicotex Electronics (HK) Limited