Description
SI4900DY-T1-E3, VISHAY, 8-SOIC (0.154, 3.90mm Width), MOSFET 2N-CH 60V 5.3A 8-SOIC, Discrete Semiconductor Products, FETs - Arrays
Part Number | SI4900DYT1E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 60V 5.3A 8-SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 5.3A |
Rds On (Max) @ Id, Vgs | 58 mOhm @ 4.3A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V |
Power - Max | 3.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
SI4900DY-T1-E3
STMicroel
79605
0.32
HK HEQING ELECTRONICS LIMITED
SI4900DY-T1-E3
STMICROELECT
18974
0.9975
Gallop Great Holdings (Hong Kong) Limited
SI4900DY-T1-E3
ST/MICRON
4868000
1.675
Shenzhen WTX Capacitor Co., Ltd.
SI4900DY-T1-E3
ST
204212
2.3525
Cicotex Electronics (HK) Limited
SI4900DY-T1-E3
STMicroelectronics
757
3.03
HXY Electronics (HK) Co.,Limited