Part Number | SI4860DY-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 11A 8-SOIC |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta) |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 16A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4860DY-T1-E3
STMicroel
6895
1.47
KYO Inc.
SI4860DY-T1-E3
STMICROELECT
5300
2.3425
Gallop Great Holdings (Hong Kong) Limited
SI4860DY-T1-E3
ST/MICRON
204134
3.215
Cicotex Electronics (HK) Limited
Si4860DY-T1-E3
ST
100
4.0875
Yingxinyuan INT'L (Group) Limited
SI4860DY-T1-E3
STMicroelectronics
4868000
4.96
Shenzhen WTX Capacitor Co., Ltd.