Description
DATASHEET Dec 29, 2008 Ordering Information: Si4812BDY -T1-E3 (Lead (Pb)-free). Si4812BDY -T1-GE3 ( Lead (Pb)-free and Halogen-free). N-channel MOSFET. G. S. SPICE Device Model Si4812BDY . Document Number: 73070. S-51986 Rev. B, 03-Oct-05. N-Channel 30-V (D-S) MOSFET with Schottky Diode. Jul 20, 2009 8834. Keystone. 29. 1. Q1. Si4812BDY . 30 V. SO-8. Si4812BDY . Vishay. 30. 2. R1,R3. 100K. 50 V. SM/C_0603. CRCW0603100KFKEA. Vishay. Si4812BDY . N-Ch. Reduced Qg, Fast Switching. MOSFET. N-Channel; 30-V (D-S );. rDS(on) = 0.021 Ohm;. Qgd=2.1nC. SMD. SO-8. Si7230DN. N-Ch. Reduced High-Efficient PWM Optimized. High VGS = 25V. ID=9A; rDS(on)=0.030 . Qgd= 3.5nC; VGSth= 0.8 V;. SMD. SO-8. Si4812BDY . N-Ch. 30-V (D-S) MOSFET w.
Part Number | SI4812BDY |
Brand | STMicroelectronics |
Image |
SI4812BDY
STMicroel
32529
1.08
Yingxinyuan INT'L (Group) Limited
SI4812BDY
STMICROELECT
287071
2.2575
Cicotex Electronics (HK) Limited
SI4812BDY
ST/MICRON
11250
3.435
N&S Electronic Co., Limited
SI4812BDY
ST
4868000
4.6125
Shenzhen WTX Capacitor Co., Ltd.
SI4812BDY
STMicroelectronics
21100
5.79
N&S Electronic Co., Limited