STMicroelectronics

Ref. [hkinstmicroelectronics20220920][hkinbrandcloudAMpd]

Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

Rated (5/5) based on 16 customer reviews

Description

MOSFET N/P-CH 20V 6.6A 8SOIC Series: TrenchFET? FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 6.6A, 3.8A Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250米A Gate Charge (Qg) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.3W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO

Part Number SI4500BDY-T1-E3
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Arrays
Brand STMicroelectronics
Description MOSFET N/P-CH 20V 6.6A 8SOIC
Series TrenchFET
Packaging
FET Type N and P-Channel, Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.6A, 3.8A
Rds On (Max) @ Id, Vgs 20 mOhm @ 9.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.3W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.58   Highest Price: $6.36
1 - 5 of 5 Record(s)

Hot Offer

Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

SI4500BDY-T1-E3

Brand:

STMicroelectronics

D/C:
Qty:

850000

Price (USD):

6.36

Company:

Far East Electronics Technology Limited

Buy
Part Number
Brand
D/C
Qty
Price (USD)
Company
Part Number:

SI4500BDY-T1-E3

Brand:

STMicroel

D/C:
Qty:

320

Price (USD):

1.58

Company:

Gallop Great Holdings (Hong Kong) Limited

Buy
Part Number:

SI4500BDY-T1-E3

Brand:

STMICROELECT

D/C:
21+
Qty:

225800

Price (USD):

2.775

Company:

WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED

Buy
Part Number:

SI4500BDY-T1-E3

Brand:

ST/MICRON

D/C:
2010
Qty:

885

Price (USD):

3.97

Company:

Pacific Corporation

Buy
Part Number:

SI4500BDY-T1-E3

Brand:

ST

D/C:
2022
Qty:

4868000

Price (USD):

5.165

Company:

Shenzhen WTX Capacitor Co., Ltd.

Buy

SI4500BDYT1E3 Ref.

[hkinstmicroelectronics20220920][hkinbrandcloudAMpd]
[[[False]]]
Cached Page:404;https://stmicroelectronics.hkinventory.com:443/p/details