Part Number | SI4464DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 200V 1.7A 8-SOIC |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 240 mOhm @ 2.2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4464DY-T1-GE3
STMicroel
81873
1.3
HK HEQING ELECTRONICS LIMITED
Si4464DY-T1-GE3
STMICROELECT
5000000
2.415
Hongkong Shengshi Electronics Limited
SI4464DY-T1-GE3
ST/MICRON
5248
3.53
Gallop Great Holdings (Hong Kong) Limited
SI4464DY-T1-GE3
ST
850000
4.645
Far East Electronics Technology Limited
SI4464DY-T1-GE3
STMicroelectronics
4868000
5.76
Shenzhen WTX Capacitor Co., Ltd.