Description
MOSFET 2N-CH 30V 6.6A 8-SOIC Series: TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 6.6A Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.1W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
Part Number | SI4330DY-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 30V 6.6A 8-SOIC |
Series | TrenchFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6.6A |
Rds On (Max) @ Id, Vgs | 16.5 mOhm @ 8.7A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
SI4330DY-T1-E3
STMicroel
3600
1.45
Gallop Great Holdings (Hong Kong) Limited
SI4330DY-T1-E3
STMICROELECT
50000
2.65
Hong Kong Yingweida Electronics Co., Ltd.
SI4330DY-T1-E3
ST/MICRON
265102
3.85
Cicotex Electronics (HK) Limited
SI4330DY-T1-E3
ST
4868000
5.05
Shenzhen WTX Capacitor Co., Ltd.
SI4330DY-T1-E3.
STMicroelectronics
11450
6.25
CIS Ltd (CHECK IC SOLUTION LIMITED)