Part Number | SI4330DY-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 30V 6.6A 8-SOIC |
Series | TrenchFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6.6A |
Rds On (Max) @ Id, Vgs | 16.5 mOhm @ 8.7A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
SI4330DY-T1-E3
STMicroel
4877
0.32
Gallop Great Holdings (Hong Kong) Limited
SI4330DY-T1-E3
STMICROELECT
5135
1.765
Hong Kong Yingweida Electronics Co., Ltd.
SI4330DY-T1-E3
ST/MICRON
584
3.21
Cicotex Electronics (HK) Limited
SI4330DY-T1-E3
ST
7627
4.655
Shenzhen WTX Capacitor Co., Ltd.
SI4330DY-T1-E3.
STMicroelectronics
756
6.1
CIS Ltd (CHECK IC SOLUTION LIMITED)