Description
MOSFET 2N-CH 25V 8A 8SOIC Series: TrenchFET? FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25~C: 8A Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250米A Gate Charge (Qg) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) @ Vds: 1255pF @ 15V Power - Max: 3.2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
Part Number | SI4226DY-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 25V 8A 8SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 8A |
Rds On (Max) @ Id, Vgs | 19.5 mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1255pF @ 15V |
Power - Max | 3.2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
SI4226DY-T1-E3
STMicroel
30000
1.5
Gallop Great Holdings (Hong Kong) Limited
SI4226DY-T1-E3
STMICROELECT
35200
2.5575
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
Si4226DY-T1-E3
ST/MICRON
50000
3.615
Hong Kong Yingweida Electronics Co., Ltd.
SI4226DY-T1-E3
ST
71000
4.6725
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
Si4226DY-T1-E3
STMicroelectronics
4868000
5.73
Shenzhen WTX Capacitor Co., Ltd.