Part Number | SI4160DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 25.4A 8-SOIC |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 25.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2071pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 5.7W (Tc) |
Rds On (Max) @ Id, Vgs | 4.9 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4160DY-T1-GE3
STMicroel
2306
1.79
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SI4160DY-T1-GE3
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5579
2.9925
Pivot Technology Co., Ltd.
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ST/MICRON
1262
4.195
Viassion Technology Co., Limited
SI4160DY-T1-GE3
ST
9460
5.3975
Shenzhen WTX Capacitor Co., Ltd.
SI4160DY-T1-GE3
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3456
6.6
N&S Electronic Co., Limited