Part Number | SI4104DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 100V 4.6A 8-SOIC |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 446pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
Rds On (Max) @ Id, Vgs | 105 mOhm @ 5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4104DY-T1-GE3
STMicroel
10026
1.1
HK HEQING ELECTRONICS LIMITED
SI4104DY-T1-GE3
STMICROELECT
1100
1.6125
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI4104DY-T1-GE3
ST/MICRON
263592
2.125
Cicotex Electronics (HK) Limited
SI4104DY-T1-GE3
ST
850000
2.6375
Far East Electronics Technology Limited
SI4104DY-T1-GE3
STMicroelectronics
36199
3.15
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED