Part Number | SI4100DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 100V 6.8A 8-SOIC |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 6W (Tc) |
Rds On (Max) @ Id, Vgs | 63 mOhm @ 4.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4100DY-T1-GE3
STMicroel
189
1.18
Gallop Great Holdings (Hong Kong) Limited
SI4100DY-T1-GE3
STMICROELECT
850000
2.2875
Far East Electronics Technology Limited
SI4100DY-T1-GE3
ST/MICRON
50000
3.395
Hong Kong Yingweida Electronics Co., Ltd.
SI4100DY-T1-GE3
ST
263587
4.5025
Cicotex Electronics (HK) Limited
Si4100DY-T1-GE3
STMicroelectronics
50000
5.61
Yingxinyuan INT'L (Group) Limited