Part Number | SI3911DV-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2P-CH 20V 1.8A 6TSOP |
Series | TrenchFET |
Packaging | |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.8A |
Rds On (Max) @ Id, Vgs | 145 mOhm @ 2.2A, 4.5V |
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 830mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | 6-TSOP |
Image |
Hot Offer
SI3911DV-T1-E3
STMicroel
180000
0.43
Jordong Technology Co., Limited
SI3911DV-T1-E3
STMICROELECT
30000
1.175
N&S Electronic Co., Limited
SI3911DV-T1-E3
ST/MICRON
41152
1.92
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI3911DV-T1-E3
ST
83000
2.665
Yingxinyuan INT'L (Group) Limited
SI3911DV-T1-E3
STMicroelectronics
4868000
3.41
Shenzhen WTX Capacitor Co., Ltd.