Part Number | SI3900DV-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 20V 2A 6-TSOP |
Series | TrenchFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2A |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 2.4A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 830mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | 6-TSOP |
Image |
SI3900DV-T1-GE3
STMicroel
7030
0.53
Gallop Great Holdings (Hong Kong) Limited
Si3900DV-T1-GE3
STMICROELECT
5482
1.875
Hong Kong Capital Industrial Co.,Ltd
SI3900DV-T1-GE3
ST/MICRON
8824
3.22
RX ELECTRONICS LIMITED
SI3900DV-T1-GE3
ST
4566
4.565
Cicotex Electronics (HK) Limited
SI3900DV-T1-GE3
STMicroelectronics
4369
5.91
Shenzhen WTX Capacitor Co., Ltd.