STMicroelectronics

Ref. [hkinstmicroelectronics20220920][hkinbrandcloudAMpd]

Electronic circuits form a mostly invisible part of the world we live in today. These circuits are present in microchips or just "chips", which combine the latest advances in performance, intelligence and, efficiency. Hundreds or thousands of these chips are integrated into each of the millions and billions of electronic devices people across the globe interact with every day. It is in this unseen realm that STMicroelectronics creates the sparks that animate the products we use at any given moment. Our technology is found everywhere microelectronics makes a positive contribution to people's lives. Chips from ST embedding the most advanced innovations are an essential part of products as diverse as cars and key fobs, giant factory machines and data center power supplies, washing machines and hard disks, and smartphones and toothbrushes. We help our customers make these devices more intelligent, more energy efficient, more connected, safer and more secure.

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Description

MOSFET N/P-CH 20V 2A 6-TSOP Series: TrenchFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 2A, 1.5A Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250米A (Min) Gate Charge (Qg) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 830mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP

Part Number SI3585DV-T1-GE3
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Arrays
Brand STMicroelectronics
Description MOSFET N/P-CH 20V 2A 6-TSOP
Series TrenchFET
Packaging Cut Tape (CT)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A, 1.5A
Rds On (Max) @ Id, Vgs 125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.74   Highest Price: $5.22
1 - 5 of 5 Record(s)
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Part Number:

SI3585DV-T1-GE3

Brand:

STMicroel

D/C:
Qty:

3000

Price (USD):

1.74

Company:

Gallop Great Holdings (Hong Kong) Limited

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Part Number:

SI3585DV-T1-GE3

Brand:

STMICROELECT

D/C:
21+
Qty:

55200

Price (USD):

2.61

Company:

WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED

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Part Number:

Si3585DV-T1-GE3

Brand:

ST/MICRON

D/C:
21+
Qty:

3000

Price (USD):

3.48

Company:

Hong Kong Capital Industrial Co.,Ltd

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Part Number:

Si3585DV-T1-GE3

Brand:

ST

D/C:
21+
Qty:

263479

Price (USD):

4.35

Company:

Cicotex Electronics (HK) Limited

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Part Number:

SI3585DV-T1-GE3

Brand:

STMicroelectronics

D/C:
2022
Qty:

4868000

Price (USD):

5.22

Company:

Shenzhen WTX Capacitor Co., Ltd.

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SI3585DVT1GE3 Ref.

[hkinstmicroelectronics20220920][hkinbrandcloudAMpd]
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