Part Number | SI3585DV-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET N/P-CH 20V 2A 6-TSOP |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2A, 1.5A |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 2.4A, 4.5V |
Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 830mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | 6-TSOP |
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SI3585DV-T1-GE3
STMicroel
8047
0.38
Gallop Great Holdings (Hong Kong) Limited
SI3585DV-T1-GE3
STMICROELECT
1658
1.7575
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
Si3585DV-T1-GE3
ST/MICRON
2815
3.135
Hong Kong Capital Industrial Co.,Ltd
Si3585DV-T1-GE3
ST
5730
4.5125
Cicotex Electronics (HK) Limited
SI3585DV-T1-GE3
STMicroelectronics
1961
5.89
Shenzhen WTX Capacitor Co., Ltd.