Part Number | SI3495DV-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 20V 5.3A 6-TSOP |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 750mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.1W (Ta) |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 7A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
SI3495DV-T1-E3
STMicroel
10000
1.59
Gallop Great Holdings (Hong Kong) Limited
SI3495DV-T1-E3
STMICROELECT
55100
2.3525
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI3495DV-T1-E3
ST/MICRON
10000
3.115
Hong Kong Capital Industrial Co.,Ltd
SI3495DV-T1-E3
ST
389600
3.8775
Shenzhen WTX Capacitor Co., Ltd.
SI3495DV-T1-E3
STMicroelectronics
263463
4.64
Cicotex Electronics (HK) Limited