Part Number | SI3460DV-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 20V 5.1A 6TSOP |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 450mV @ 1mA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 1.1W (Ta) |
Rds On (Max) @ Id, Vgs | 27 mOhm @ 5.1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
SI3460DVT1E3
STMicroel
361600
1.38
IC Chip Co., Ltd.
SI3460DV-T1-E3
STMICROELECT
13274
2.54
HK HEQING ELECTRONICS LIMITED
SI3460DV-T1-E3
ST/MICRON
3000
3.7
Acort Co., Limited
SI3460DV-T1-E3
ST
263425
4.86
Cicotex Electronics (HK) Limited
SI3460DV-T1-E3
STMicroelectronics
60267
6.02
TERNARY UNION CO., LIMITED