Part Number | SI3451DV-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 20V 2.8A 6-TSOP |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.1nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta), 2.1W (Tc) |
Rds On (Max) @ Id, Vgs | 115 mOhm @ 2.6A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
SI3451DV-T1-E3
STMicroel
1007
0.15
Sino Star Electronics (HK) Co.,Limited
SI3451DV-T1-E3
STMICROELECT
9010
0.8125
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
SI3451DV-T1-E3
ST/MICRON
2261
1.475
MY Group (Asia) Limited
SI3451DV-T1-E3
ST
2286
2.1375
ATLANTIC TECHNOLOGY LIMITED
SI3451DV-T1-E3
STMicroelectronics
7807
2.8
Yingxinyuan INT'L (Group) Limited