Part Number | SI3433BDV-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 20V 4.3A 6-TSOP |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 850mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.1W (Ta) |
Rds On (Max) @ Id, Vgs | 42 mOhm @ 5.6A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
SI3433BDV-T1-E3
STMicroel
19025
1.01
HK HEQING ELECTRONICS LIMITED
SI3433BDV-T1-E3
STMICROELECT
512011
2.2375
Cicotex Electronics (HK) Limited
SI3433BDV-T1-E3
ST/MICRON
33900
3.465
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI3433BDV-T1-E3
ST
15000
4.6925
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI3433BDV-T1-E3
STMicroelectronics
4868000
5.92
Shenzhen WTX Capacitor Co., Ltd.