Part Number | SI2367DST1GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 20V 3.8A SOT-23 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 561pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 960mW (Ta), 1.7W (Tc) |
Rds On (Max) @ Id, Vgs | 66 mOhm @ 2.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
SI2367DS-T1-GE3
STMicroel
3000
0.31
HK HEQING ELECTRONICS LIMITED
SI2367DS-T1-GE3
STMICROELECT
5000000
1.7475
Hongkong Shengshi Electronics Limited
SI2367DS-T1-GE3
ST/MICRON
13100
3.185
Gallop Great Holdings (Hong Kong) Limited
Si2367DS-T1-GE3
ST
46000
4.6225
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
Si2367DS-T1-GE3
STMicroelectronics
368000
6.06
Shenzhen WTX Capacitor Co., Ltd.