Part Number | SI1070X-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 1.2A SOT563F |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.3nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 385pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 236mW (Ta) |
Rds On (Max) @ Id, Vgs | 99 mOhm @ 1.2A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-89-6 |
Package / Case | SOT-563, SOT-666 |
Image |
SI1070X-T1-E3
STMicroel
5000000
0.23
Hongkong Shengshi Electronics Limited
SI1070X-T1-E3
STMICROELECT
12000
1.165
Gallop Great Holdings (Hong Kong) Limited
SI1070X-T1-E3
ST/MICRON
65500
2.1
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI1070X-T1-E3
ST
7030
3.035
Viassion Technology Co., Limited
SI1070X-T1-E3
STMicroelectronics
3000
3.97
Yingxinyuan INT'L (Group) Limited