Part Number | SI1056X-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 20V SC-89-6 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 236mW (Ta) |
Rds On (Max) @ Id, Vgs | 89 mOhm @ 1.32A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-89-6 |
Package / Case | SOT-563, SOT-666 |
Image |
Si1056X-T1-GE3
STMicroel
2500
1.72
Nosin (HK) Electronics Co.
Si1056X-T1-GE3
STMICROELECT
4009
2.3525
ATLANTIC TECHNOLOGY LIMITED
SI1056X-T1-GE3
ST/MICRON
4429
2.985
CIS Ltd (CHECK IC SOLUTION LIMITED)
Si1056X-T1-GE3
ST
25558
3.6175
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
SI1056X-T1-GE3
STMicroelectronics
10459
4.25
Yingxinyuan INT'L (Group) Limited