Part Number | SI1051X-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET P-CH 8V 1.2A SC89-6 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 9.45nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 4V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 236mW (Ta) |
Rds On (Max) @ Id, Vgs | 122 mOhm @ 1.2A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-89-6 |
Package / Case | SOT-563, SOT-666 |
Image |
SI1051X-T1-GE3
STMicroel
7000
1.55
CIS Ltd (CHECK IC SOLUTION LIMITED)
Si1051X-T1-GE3
STMICROELECT
284269
2.9025
Cicotex Electronics (HK) Limited
SI1051X-T1-GE3
ST/MICRON
9951
4.255
ATLANTIC TECHNOLOGY LIMITED
SI1051X-T1-GE3
ST
5000
5.6075
Gallop Great Holdings (Hong Kong) Limited
SI1051X-T1-GE3
STMicroelectronics
31500
6.96
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED