Part Number | SI1032X-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 20V 200MA SC89-3 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 300mW (Ta) |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 200mA, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-89-3 |
Package / Case | SC-89, SOT-490 |
Image |
SI1032X-T1-E3
STMicroel
1400
1.82
HK HEQING ELECTRONICS LIMITED
SI1032X-T1-E3
STMICROELECT
46000
2.75
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI1032X-T1-E3
ST/MICRON
2435
3.68
Yingxinyuan INT'L (Group) Limited
SI1032X-T1-E3
ST
284241
4.61
Cicotex Electronics (HK) Limited
SI1032X-T1-E3
STMicroelectronics
11019
5.54
Gallop Great Holdings (Hong Kong) Limited