Part Number | SI1026X-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | STMicroelectronics |
Description | MOSFET 2N-CH 60V 0.305A SOT563F |
Series | - |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 305mA |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 25V |
Power - Max | 250mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SC-89-6 |
Image |
Hot Offer
SI1026X-T1-E3
STMicroelectronics
4604
1.67
HK HEQING ELECTRONICS LIMITED
SI1026X-T1-E3
STMicroel
930
0.72
Gallop Great Holdings (Hong Kong) Limited
SI1026X-T1-E3
STMICROELECT
1048
0.9575
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI1026X-T1-E3
ST/MICRON
5560
1.195
QUARKTWIN TECHNOLOGY LIMITED
SI1026X-T1-E3
ST
1554
1.4325
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED