Part Number | SCT50N120 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 1.2KV TO247-3 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 122nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 400V |
Vgs (Max) | +25V, -10V |
FET Feature | - |
Power Dissipation (Max) | 318W (Tc) |
Rds On (Max) @ Id, Vgs | 69 mOhm @ 40A, 20V |
Operating Temperature | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | HiP247 |
Package / Case | TO-247-3 |
Image |
SCT50N120
STMicroel
9000
1.38
Fairstock HK Limited
SCT50N120
STMICROELECT
525
2.0025
HK HEQING ELECTRONICS LIMITED
SCT50N120
ST/MICRON
20000
2.625
HK XINYI COMPONENTS ASIA CO., LIMITED
SCT50N120
ST
21632
3.2475
N&S Electronic Co., Limited
SCT50N120
STMicroelectronics
11120
3.87
CIS Ltd (CHECK IC SOLUTION LIMITED)