Description
Density. 1 Gb / 2 Gb / 4 Gb. Architecture. Input / Output Bus Width: 8 bits / 16 bits. Page size: 8: 1 Gb: (2048 + 64) bytes; 64-byte spare area. 2 Gb / 4 S34ML01G200BHI000 . Cypress Semiconductor Corporation. 198 Champion Court. San Jose, CA 95134, USA. Note: This is an electronically printed document, May 26, 2017 The S29GL-N family of devices are 3.0-Volt single-power Flash memory manufactured using 110 nm MirrorBit technology. The. S29GL064N is Dec 1, 2015 Start Date. 1Gb. S34ML01G200BHI000 . S34ML01G200BHV000. S34ML01G200TFI000. S34ML01G200TFV000. S34MS01G200TFI000. Micron single level cell (SLC) NAND Flash memory features a unique serial number identifier. The first eight bytes of the OTP area contain a unique identifier
Part Number | S34ML01G200BHI000 |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | STMicroelectronics |
Description | IC FLASH 1GBIT 25NS 63BGA |
Series | ML-2 |
Packaging | Tray |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND |
Memory Size | 1Gb (128M x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 25ns |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 2.7 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 63-VFBGA |
Supplier Device Package | 63-BGA (11x9) |
Image |
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