Description
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and IFSM. Surge non repetitive forward current tp = 10 ms Sinusoidal. 220. A. IRRM. Repetitive peak reverse current tp = 2 s square F=1kHz. 1. A. IRSM.
Part Number | S30D40C |
Brand | STMicroelectronics |
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S30D40C
STMicroel
20
1.8
Gallop Great Holdings (Hong Kong) Limited
S30D40C
STMICROELECT
5000
2.6875
Buye Technology Limited
S30D40C
ST/MICRON
4849
3.575
Belt (HK) Electronics Co
S30D40C
ST
12000
4.4625
Rainstar Components USA Incorporated Limited
S30D40C
STMicroelectronics
288255
5.35
Cicotex Electronics (HK) Limited