Part Number | RT1C060UNTR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 20V 6A TSST8 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 10V |
Vgs (Max) | ±10V |
FET Feature | - |
Power Dissipation (Max) | 650mW (Ta) |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 6A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSST |
Package / Case | 8-SMD, Flat Lead |
Image |
RT1C060UNTR
STMicroel
1000
0.23
ONSTAR ELECTRONICS CO., LIMITED
RT1C060UNTR
STMICROELECT
3000
1.2025
Dan-Mar Components Inc.
RT1C060UNTR
ST/MICRON
36000
2.175
MASSTOCK ELECTRONICS LIMITED
RT1C060UNTR
ST
5000
3.1475
Gallop Great Holdings (Hong Kong) Limited
RT1C060UN
STMicroelectronics
5000000
4.12
Hongkong Shengshi Electronics Limited