Part Number | RQ3E130BNTB |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 13A HSMT8 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 13A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-HSMT (3.2x3) |
Package / Case | 8-PowerVDFN |
Image |
RQ3E130BNTB
STMicroel
200
1.01
Daon semicom co.,Ltd.
RQ3E130BNTB
STMICROELECT
35800
1.685
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
RQ3E130BNTB
ST/MICRON
75
2.36
ABBI Electronics Company Limited
RQ3E130BNTB
ST
30000
3.035
Shenzhen Kesheng Shunyuan Electronics Co., Ltd.
RQ3E130BNTB
STMicroelectronics
21
3.71
Cicotex Electronics (HK) Limited