Part Number | RQ3E070BNTB |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 30V 7A HSMT8 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 8.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Rds On (Max) @ Id, Vgs | 27 mOhm @ 7A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-HSMT (3.2x3) |
Package / Case | 8-PowerVDFN |
Image |
RQ3E070BNTB
STMicroel
180
1.68
SUNTOP SEMICONDUCTOR CO., LIMITED
RQ3E070BNTB
STMICROELECT
100000
2.9175
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED
RQ3E070BNTB
ST/MICRON
706
4.155
Gallop Great Holdings (Hong Kong) Limited
RQ3E070BNTB
ST
169830
5.3925
Cicotex Electronics (HK) Limited
RQ3E070BNTB
STMicroelectronics
71000
6.63
CIS Ltd (CHECK IC SOLUTION LIMITED)