Description
RN1966FE, TOSHIBA, ES6, Discrete Semiconductor Products, Transistors (BJT) - Arrays, Pre-Biased
Part Number | RN1966FE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | STMicroelectronics |
Description | TRANS 2NPN PREBIAS 0.1W ES6 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
RN1966FE
STMicroel
5000000
1
Hongkong Shengshi Electronics Limited
RN1966FE
STMICROELECT
12130
2.4325
Gallop Great Holdings (Hong Kong) Limited
RN1966FE
ST/MICRON
60000
3.865
Hong Kong Capital Industrial Co.,Ltd
RN1966FE SOT463-XXF
ST
163000
5.2975
N&S Electronic Co., Limited
RN1966FE
STMicroelectronics
268072
6.73
Cicotex Electronics (HK) Limited