Description
RN1310, TOSHIBA, Discrete Semiconductor Products, Transistors (BJT) - Single, Pre-Biased
Part Number | RN1310 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | STMicroelectronics |
Description | TRANS PREBIAS NPN 0.1W USM |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | USM |
Image |
RN1310
STMicroel
6000
1.26
Gallop Great Holdings (Hong Kong) Limited
RN1310
STMICROELECT
81000
1.7575
HXY Electronics (HK) Co.,Limited
RN1310
ST/MICRON
5000000
2.255
Hongkong Shengshi Electronics Limited
RN1310
ST
368000
2.7525
Shenzhen WTX Capacitor Co., Ltd.
RN1310
STMicroelectronics
49850
3.25
Z.H.T TECHNOLOGY HK LIMITED