Description
R07DS0076EJ0200 Rev.2.00. Page 1 of 6. Apr 09, 2013. Preliminary Datasheet. RJK0651DPB . 60V, 25A, 14m max. Silicon N Channel Power MOS FET. Dec 29, 2014 RENESAS ELECTRONIC, RJK0651DPB . 19. 2. Q2, Q4. XSTR, POWER MOSFET LFPAK. RENESAS ELECTRONIC, RJK0652DPB. 20. 1. RS1. Renasas RJK0651DPB . Q4,Q6. 0. Not installed (LFPAK). Renasas RJK0653DPB . D1,D2. 2. 100V Schottky Diode (POWERDI 123). Diodes Incorporated DFLS C9. 22 F. C10. 22 F. L1. 4.7 H. R3. C1. 2.2 F. C2. 2.2 F. 158k. R4. 34.8k. 0.1 F . 0.022 F. 2.2 F. VOUT. 5V, 5A. N1. L1 = XAL8080-472. N1 = RJK0651DPB M1, M2: RENESAS RJK0651DPB 60Vds. M3, M4: RENESAS RJK0451DPB 40Vds. C1: NIPPON CHEMICON EMZA800ADA470MJAOG. COUT: SUNCON
Part Number | RJK0651DPB |
Brand | STMicroelectronics |
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RJK0651DPB
STMicroel
88085
1.21
Kunlida Electronics (HK) Limited
RJK0651DPB
STMICROELECT
1000
2.1475
Xinnlinx Electronics Pte Ltd
RJK0651DPB
ST/MICRON
5000
3.085
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
RJK0651DPB
ST
14789
4.0225
CIS Ltd (CHECK IC SOLUTION LIMITED)
RJK0651DPB
STMicroelectronics
222043
4.96
Cicotex Electronics (HK) Limited