Description
of the line and load range than larger RFP45N06 MOSFETs. The RFP25N05 ( used on the ISL6430/7EVAL1) has a. rDS(ON) equal to 47m (maximum at 25 o. of the line and load range than larger RFP45N06 MOSFETs. The RFP25N05 ( used on the HIP6006/7EVAL1) has a. rDS(ON) equal to 47m (maximum at 25 o. RFP45N06 . In comparison to the RFP25N05, the. RFP45N06s gain in switching losses offsets its decreased conduction losses at load currents up to about 9A. RFP25N05, the RFP45N06s gain in switching losses offsets its decreased conduction losses at load currents up to about. 7A with a 5V input, and about 9A with (Unit is not suitable for this application!) C. Try RFP45N06 . Assume TJ = 175 o. C. Check to be sure UIS stress is within RFP45N06 capability. Capability at 4.0A,
Part Number | RFP45N06 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 60V 45A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 150nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 2050pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 131W (Tc) |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 45A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
RFP45N06
STMicroel
1150
1.44
Gallop Great Holdings (Hong Kong) Limited
RFP45N06
STMICROELECT
21400
2.3075
Ande Electronics Co., Limited
RFP45N06_NL
ST/MICRON
11123
3.175
N&S Electronic Co., Limited
RFP45N06**
ST
49800
4.0425
CIS Ltd (CHECK IC SOLUTION LIMITED)
RFP45N06
STMicroelectronics
21045
4.91
N&S Electronic Co., Limited