Part Number | RFD3055LESM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | STMicroelectronics |
Description | MOSFET N-CH 60V 11A TO-252AA |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 38W (Tc) |
Rds On (Max) @ Id, Vgs | 107 mOhm @ 8A, 5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252AA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
RFD3055LESM
STMicroel
14820
0.97
HK HEQING ELECTRONICS LIMITED
RFD3055LESM
STMICROELECT
200000
2.1175
Shenzhen WTX Capacitor Co., Ltd.
RFD3055LESM
ST/MICRON
23039
3.265
Yingxinyuan INT'L (Group) Limited
RFD3055LESM
ST
289720
4.4125
Cicotex Electronics (HK) Limited
RFD3055LESM
STMicroelectronics
51
5.56
Gallop Great Holdings (Hong Kong) Limited