Description
Datasheet 1 of 11. Optimum Technology Matching Applied. GaAs HBT. InGaP HBT. GaAs MESFET. SiGe BiCMOS. Si BiCMOS. SiGe HBT. GaAs pHEMT. Si CMOS. Jun 6, 2010 Pass. Biased Temperature. Cycling. JESD22-A105. Condition B, -40 to 125 C. 74 x 1 lot, QBS to RF3809 pass. Temperature Humidity with Bias. RFPA3809010A. RF MICRO DEVICES , RFMD , Optimum Technology Matching , Enabling Wireless Connectivity , PowerStar , POLARIS TOTAL amplifiers with similar gain and IP3 characteristics in the 2.3GHz to 2.4GHz band: the RF3809 (10.6dB gain, 42.7dBm IP3) and the SZP-2026(Z) (12.6dBm gain,
Part Number | RF3809 |
Brand | STMicroelectronics |
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RF3809
STMicroel
20000
0.56
SHENZHEN YIXINWEI Co.,LIMTITED
RF3809
STMICROELECT
12914
1.23
IC Chip Co., Ltd.
RF3809
ST/MICRON
52632
1.9
Innovation Best Electronics Technology Limited
RF3809
ST
52300
2.57
KHWY GROUP LIMITED
RF3809
STMicroelectronics
32500
3.24
KST Components Limited