Description
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W. DESCRIPTION. RD07MVS1 is a MOS FET type transistor specifically designed for Jun 22, 2010 t=0.8 ,material:FR4. The plating thickness of through hole=0.05. Mitsubishi heat sink size=40.0*90.0*10.0 UNIT:mm. RD07MVS1 . Pch vs Ta. This application note show the test results of surge tolerance for RD-series. - Type number. RD01MUS1. RD02MUS1. RD07MVS1 . RD30HVF1. RD30HUF1. Dec 4, 2008 previous model, the RD07MVS1 . In addition, the 50-percent drain efficiency guaranteed in Mitsubishi Electrics previous model did not cover.
Part Number | RD07MVS1 |
Brand | STMicroelectronics |
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RD07MVS1
STMicroel
1000
0.16
Gallop Great Holdings (Hong Kong) Limited
RD07MVS1
STMICROELECT
200
0.975
JFJ Electronics Co.,Limited
RD07MVS1
ST/MICRON
11001
1.79
CIS Ltd (CHECK IC SOLUTION LIMITED)
RD07MVS1
ST
2000
2.605
Belt (HK) Electronics Co
RD07MVS1
STMicroelectronics
2000
3.42
Nosin (HK) Electronics Co.