Description
The PD85035 -E is a common source N-channel, enhancement-mode lateral field -effect RF power transistor. It is designed for high gain, broadband commercial Jul 22, 2013 DocID025026 Rev 1. 1/4. STEVAL-TDR031V1. 45 W / 380-490 MHz RF power module based on the PD85035S -E for mobile radio applications. Jul 25, 2013 Based on the two devices datasheets ( PD85035S -E and PD85050S) we calculated that a. 36 dBm power level is required to achieve a 45 W or PowerFlat. Q3, Q4. ST. 2. PSO-10. PD85035S . PSO-10. R1. Vishay. 1. 220 Ohm. CRCW0402220RFKED. 0402. R2. Vishay. 1. 150 Ohm. CRCW0402150RFKED. The PD85035C is a common source. N-channel, enhancement-mode lateral Field-. Effect RF power transistor. It is designed for high gain, broadband
Part Number | PD85035S |
Brand | STMicroelectronics |
Image |
PD85035S
STMicroel
1300
0.68
TOK HK Electronics Co., Limited
PD85035S
STMICROELECT
5000
1.42
Bostock HK Limited
PD85035S
ST/MICRON
32500
2.16
KST Components Limited
PD85035S
ST
5868
2.9
Dedicate Electronics (HK) Limited
PD85035-E
STMicroelectronics
10000
3.64
ShenZhen Boguang Electronics Co., Ltd.