Description
This N-channel 100 V Power MOSFET is the latest development of STMicroelectronics unique. single feature size strip-based process. The resulting transistor VCES. Collector-emitter voltage (VBE = 0). 800. V. VCEO. Collector-emitter voltage (IB = 0). 450. V. VEBO. Emitter-base voltage (IC = 0). 9. V. IC. Collector In order to meet environmental requirements, ST offers these devices in. ECOPACK packages. These packages have a Lead-free second level interconnect . This Power MOSFET series realized with. STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate The 2N4393 is operated as a Miller integrator The high Yfs of the 2N4393 (over 12 000 mmhos. 5 mA) yields a stage gain of about 60 Since the equivalent
Part Number | P6N60FI |
Brand | STMicroelectronics |
Image |
P6N60FI
STMicroel
6468
0.12
Dedicate Electronics (HK) Limited
P6N60FI
STMICROELECT
20000
1.325
Ande Electronics Co., Limited
P6N60F1
ST/MICRON
8738
2.53
Dedicate Electronics (HK) Limited
P6N60FI
ST
20000
3.735
Ande Electronics Co., Limited
P6N60FI
STMicroelectronics
6468
4.94
Dedicate Electronics (HK) Limited